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STT3922N - N-channel MOSFET

General Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Key Features

  • Low on-resistance.
  • Low drive current.
  • Low RDS(on) Provides Higher Efficiency and Extends Battery Life.
  • Fast switching speed.
  • High performance trench technology.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente STT3922N 4.1A, 20V, RDS(ON) 47m N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of ā€œ-Cā€ specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cordless telephones.