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SUM1960NE - N-channel MOSFET

General Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Key Features

  • Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-363 saves board space Fast switching speed High performance trench technology.

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Full PDF Text Transcription (Reference)

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Elektronische Bauelemente SUM1960NE 0.32A , 60V , RDS(ON) 2 Ω N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-363 saves board space Fast switching speed High performance trench technology APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.