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Seme LAB

2N2904 Datasheet Preview

2N2904 Datasheet

GENERAL PURPOSE PNP TRANSISTOR

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2N2904
MECHANICAL DATA
Dimensions in mm (inches)
8 .8 9 (0 .3 5 )
9 .4 0 (0 .3 7 )
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
6 .1 0 (0 .2 4 0 )
6 .6 0 (0 .2 6 0 )
GENERAL PURPOSE PNP
TRANSISTOR
1 2 .7 0
(0 .5 0 0 )
m in .
0 .8 9
(0 .0 3 5
)m
ax.
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
d ia .
0 .6 6 (0 .0 2 6 )
1 .1 4 (0 .0 4 5 )
0 .7 1 (0 .0 2 8 )
0 .8 6 (0 .0 3 4 )
5 .0 8 (0 .2 0 0 )
ty p .
2
13
2 .5 4
(0 .1 0 0 )
FEATURES
• SILICON PLANAR EPITAXIAL PNP
TRANSISTOR
• CECC SCREENING OPTIONS
• LOW NOISE AMPLIFIER
45°
TO–39 METAL PACKAGE
Underside View
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
APPLICATIONS:
• GENERAL PURPOSE
• HIGH SPEED SATURATED SWITCHING
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCEO
Collector – Emitter Voltage
40V
VCBO
Collector – Base Voltage
60V
VEBO
Emmiter – Base Voltage
5V
IC Collector Current – Continuous
600mA
PD Total Device Dissipation @ TA = 25°C
600mW
Derate above 25°C
3.43mW/ °C
PD Total Device Dissipation @ TC = 25°C
Derate above 25°C
3W
17.2mW / °C
TJ , TSTG
Operating and Storage Junction Temperature Range
–65 to +200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 11/98




Seme LAB

2N2904 Datasheet Preview

2N2904 Datasheet

GENERAL PURPOSE PNP TRANSISTOR

No Preview Available !

2N2904
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter
Test Conditions
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
ICBO
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage1
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
IC = 10mA
IC = 10µA
IC = 0
VCE = 30V
VCB = 50V
VCB = 50V
IB Base Current
VCE = 30V
IB = 0
IE = 0
IE = 10µA0
VBE = 0.5V
IE = 0
IE = 0
TA = 150°C
VBE = 0.5V
ON CHARACTERISTICS
hFE DC Current Gain
IC = 0.1mA
IC = 1mA
IC = 10mA
IC = 500mA
VCE = 10V
VCE = 10V
VCE = 10V
VCE = 10V1
VCE(sat)
VBE(sat)
ELECTRICAL CHARACTERISTICS
Collector – Emitter Saturation Voltage1 IC = 150mA
IC = 500mA
Base – Emitter Saturation Voltage
IC = 150mA
IC = 500mA
SMALL SIGNAL CHARACTERISTICS
IB = 15mA
IB = 50mA
IB = 15mA1
IB = 50mA
ft
Current Gain Bandwidth Product 2
VCE = 20V IC = 50mA
f = 100MHz
Cobo
Output Capacitance
VCB = 10V
f = 100kHz
IE = 0
Cibo Input Capacitance
VBE = 2..0V IC = 0
f = 100kHz
SWITCHING CHARACTERISTICS
ton Turn–On Time
td Delay Time
tr RiseTime
toff Turn–Off Time
ts Sorage Time
tf FallTime
VCC = 30V
IB1 = 15mA
IC = 150mA
VCC = 6V
IC = 150mA
IB1 = IB2 =15mA
1) Pulse test : Pulse Width < 300µs ,Duty Cycle < 2%
2) ft is defined as the frequency at which |hfe| extrapolates to untity.
Min. Typ. Max. Unit
40
60 V
5.0
50 nA
0.02
µA
20
50 nA
20
25
35
20
0.4
V
1.6
1.3
V
2.6
200 MHz
8.0
pF
30
26 45
6.0 10 ns
20 40
70 100
50 80 ns
20 30
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 11/98


Part Number 2N2904
Description GENERAL PURPOSE PNP TRANSISTOR
Maker Seme LAB
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2N2904 Datasheet PDF






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