Seme LAB 2N2907A
HIGH SPEED MEDIUM POWER PNP TRANSISTOR
MECHANICAL DATA
Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) SEME 2N2907A HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR 5.33 (0.210) 4.32 (0.170)FEATURES
● SILICON PLANAR EPITAXIAL PNP TRANSISTOR● HIGH SPEED SATURATED SWITCHING
● ALSO AVAILABLE IN CERAMIC SURFACE MOUNT PACKAGE
● CECC SCREENING OPTIONS
● SPACE QUALITY LEVELS OPTIONS 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 2 1 TO–18 METAL PACKAGE Underside View PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TJ , TSTG Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: 12.7 (0.500) min. –60V –60V –5V 600mA 400mW 2.28mW / °C 1.8W 10.3mW / °C –65 to +200°C Prelim.