Microsemi 2N2907A
PNP TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C Operating & Storage Junction Temperature Range VCEO VCBO VEBO IC PT Top, Tstg 60 60 5.0 600 0.5 -65 to +200 Note: Consult 19500/291 forTHERMAL PERFORMANCE
Curves. Unit Vdc Vdc Vdc mAdc W °CELECTRICAL CHARACTERISTICS
(TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Collector-Base Cutoff Current VCB = 60Vdc VCB = 50Vdc Emitter-Base Cutoff Current VEB = 4.0Vdc VEB = 5.0Vdc Collector-Emitter Cutoff Current VCE = 50Vdc V(BR)CEO ICBO IEBO ICES 60 Vdc 10 μAdc 10 ηAdc 50 ηAdc 10 μAdc 50 ηAdc TO-18 (TO-206AA) 2N2906A, 2N2907A 4 PIN 2N2906AUA, 2N2907AUA 3 PIN 2N2906AUB, 2N2907AUB 2N2906AUBC, 2N2907AUBC (UBC = Ceramic Lid Version) T4-LDS-0059 Rev. 2 (100247) Page 1 of...