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2N2907A

Manufacturer: NXP Semiconductors
2N2907A datasheet preview

Datasheet Details

Part number 2N2907A
Datasheet 2N2907A_PhilipsSemiconductors.pdf
File Size 52.79 KB
Manufacturer NXP Semiconductors
Description PNP switching transistors
2N2907A page 2 2N2907A page 3

2N2907A Overview

PNP switching transistor in a TO-18 metal package. QUICK REFERENCE DATA SYMBOL VCBO VCEO PARAMETER collector-base voltage collector-emitter voltage 2N2907 2N2907A IC Ptot hFE fT toff collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tamb ≤ 25 °C IC = −150 mA; f = 100 MHz open emitter open base − − − − 100 200 −40 −60 −600 400 300 − 300 MHz ns V V mA mW CONDITIONS − MIN.

2N2907A Key Features

  • High current (max. 600 mA)
  • Low voltage (max. 60 V)

2N2907A from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
VPT Logo 2N2907A Radiation Hardened PNP Transistors VPT
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ST Microelectronics Logo 2N2907A SMALL SIGNAL PNP TRANSISTORS ST Microelectronics
Microsemi Corporation Logo 2N2907A PNP TRANSISTOR Microsemi Corporation
Seme LAB Logo 2N2907A HIGH SPEED MEDIUM POWER PNP TRANSISTOR Seme LAB
NXP Semiconductors logo - Manufacturer

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