2N2907A Datasheet PDF | Continental Device India

Continental Device India 2N2907A

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.

Part No.	2N2907A
Datasheet	2N2907A Download
Manufacturer	Continental Device India
Description	PNP SILICON PLANAR SWITCHING TRANSISTORS
Buy	Stock & Price

APPLICATIONS

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL 2N2906A, 07A UNIT Collector -Emitter Voltage VCEO 60 Collector -Base Voltage VCBO 60 Emitter -Base Voltage VEBO 5.0 Collector Current Continuous IC 600 Power Dissipation @Ta=25 degC PD 400 Derate Above 25deg C 2.28 @ Tc=25 degC PD 1.8 Derate Above 25deg C 10.3 Operating And Storage Junction Tj, Tstg Temperature Range

ELECTRICAL CHARACTERISTICS

(Ta=25 deg C Unless Otherwise Specified) V V V mA mW mW/deg C W mW/deg C deg C

DESCRIPTION

Collector -Emitter Voltage Collector -Base Voltage Emitter-Base Voltage Collector-Cut off Current SYMBOL TEST CONDITION VCEO* VCBO VEBO ICBO IC=10mA,IB=0 IC=10uA.IE=0 IE=10uA, IC=0 VCB=50V, IE=0 VALUE MIN MAX 60 60 5.0 - - 10 UNIT V V V nA Base Current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Ta=150 deg C VCB=50V, IE=0 ICEX VCE=30V, VBE=0.5V IB VCE=30V, VBE=0.5V VCE(Sat)* IC=150mA,IB=15mA IC=500mA,IB=50mA VBE(Sat) * IC=150mA,IB=15mA IC=500mA,IB=50mA - 2N2906A 10 50 50 0.4 1...

2N2907A Datasheets by Manufacturer

5 datasheets

Part Number	Manufacturer
2N2907A	NXP Semiconductors
2N2907A	Diotec Semiconductor
2N2907A	STMicroelectronics
2N2907A	Microsemi
2N2907A	Seme LAB