NXP Semiconductors 2N2907
PNP switching transistors
FEATURES
● High current (max. 600 mA)● Low voltage (max. 60 V).
APPLICATIONS
● Switching and linear amplification.DESCRIPTION
PNP switching transistor in a TO-18 metal package. NPN complements: 2N2222 and 2N2222A. 3 2N2907; 2N2907A PINNING PIN 1 2 3 emitter base collector, connected to caseDESCRIPTION
1 handbook, halfpage 2 3 2 MAM263 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO PARAMETER collector-base voltage collector-emitter voltage 2N2907 2N2907A IC Ptot hFE fT toff collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tamb ≤ 25 °C IC = −150 mA; VCE = −10 V IC = −50 mA; VCE = −20 V; f = 100 MHz open emitter open base − − − − 100 200 −40 −60 −600 400 300 − 300 MHz ns V V mA mW CONDITIONS − MIN. MAX. −60 V UNIT ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA − 1997 May 30 2 Philips Semiconductors Product specification PNP switching transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).