STMicroelectronics 2N2907
The 2N2905 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2905) and in Jedec TO-18 (for 2N2907) metal case. They are designed for high speed saturated switching and general purpose application.| Part No. | 2N2907 |
|---|---|
| Datasheet | 2N2907 Download |
| Manufacturer |  STMicroelectronics |
| Description | 1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS |
| Buy | Stock & Price |
DESCRIPTION
2N2905 approved to CECC 50002-102, 2N2907 approved to CECC 50002-103 available on request. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC P t ot Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T amb ≤ 25 C for 2N2905 for 2N2907 at T case ≤ 25 o C for 2N2905 for 2N2907 St orage Temperature Max. Operating Junction Temperature o Value -60 -40 -5 -0.6 0.6 0.4 3 1.8 -65 to 200 200 Unit V V V A W W W W o o T stg Tj C C 1/5 November 1997 2N2905/2N2907 THERMAL DATA T O-39 R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 58.3 292 TO -18 97.3 437.5 o o C/W C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symb ol I CBO I CEX I BEX Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (V BE = -0.5V) Base Cut-off Current (V BE = -0.5V) Test Cond ition s V CB = -50 V V CB = -50 V V CE = -30 V V CE = -30 V I C = -10 µ A -60 Tc ase = 150 C o Min.
