2N6301 - DARLINGTON SILICON POWER TRANSISTORS

This page provides the datasheet information for the 2N6301, a member of the 2N6300 DARLINGTON SILICON POWER TRANSISTORS family.

Features

High DC Current Gain.
Monolithic Construction with Built-in Base.
Emitter Shunt Resistors.

Seme LAB

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Datasheet Details

Part number	2N6301
Manufacturer	Seme LAB
File Size	20.75 KB
Description	DARLINGTON SILICON POWER TRANSISTORS
Datasheet	2N6301 Datasheet
Additional preview pages of the 2N6301 datasheet.

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Full PDF Text Transcription

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2N6300 2N6301 MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) DARLINGTON SILICON POWER TRANSISTORS Designed for general purpose amplifier and low frequency switching applications. 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.

Published: Apr 15, 2016 |