| Part number | BFY51 |
|---|---|
| Datasheet | BFY51-SemeLAB.pdf |
| File Size | 10.11 KB |
| Manufacturer | Seme LAB |
| Description | Bipolar NPN Device |
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BFY51 Dimensions in mm (inches). 0.41 (0.016) 0.53 (0.021) dia. VCEO = 30V IC = 1A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications Parameter VCEO IC(CONT) hFE ft PD Test Conditions @ 10/0.15 (VCE / IC) Maximum Working Voltage Min.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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BFY51 | NPN medium power transistors | NXP |
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BFY51 | MEDIUM POWER AMPLIFIER | STMicroelectronics |
 |
BFY51 | SILICON PLANAR TRANSISTORS | CDIL |
 |
BFY51 | SILICON NPN TRANSISTOR | TT |
 |
BFY51 | GENERAL PURPOSE TRANSISTOR | Motorola |
| Part Number | Description |
|---|---|
| BFY50 | MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR |
| BFY52 | Bipolar NPN Device |
| BFY56 | Bipolar NPN Device |
| BFY56B | Bipolar NPN Device |
| BFY64 | Bipolar PNP Device |
| BFY75 | Bipolar NPN Device |
| BFY76 | Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
| BFY77 | Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
| BFY84 | SILICON PLANAR EPITAXIAL NPN TRANSISTOR |
| BFY90 | SILICON PLANAR EPITAXIAL NPN TRANSISTOR |
