BUL64B - NPN Transistor

Seme LAB

Features

Multi.
base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
Triple Guard Rings for improved control of high voltages. 4.60 (0.181) Typ. 1.04 (0.041) 1.14 (0.045) I.
PAK (TO.
251) Pin 1.
Base Pin 2.
Collector Pin 3.
Emitter A.

BUL64B npn transistor by Seme LAB - Datasheet Preview

Datasheet Details

Part number	BUL64B
Manufacturer	Seme LAB
File Size	19.35 KB
Description	NPN Transistor
Datasheet	BUL64B Datasheet

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Other Datasheets by Seme LAB

Part Number	Description
BUL64A	NPN Transistor
BUL62A	NPN Transistor
BUL62B	NPN Transistor
BUL63B	NPN Transistor
BUL65A	HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

Full PDF Text Transcription

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LAB MECHANICAL DATA Dimensions in mm (inches) 6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215) SEME BUL64B 2.18 (0.086) 2.44 (0.096) 0.84 (0.033) 0.94 (0.037) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 1.09 (0.043) 1.30 (0.051) 5.97 (0.235) 6.22 (0.245) 1 2 3 0.76 (0.030) 1.14 (0.045) 0.64 (0.025) 0.89 (0.035) 8.89 (0.350) 9.78 (0.385) • • • • SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING 2.31 (0.091) Typ. 2.31 (0.091) Typ. 0.46 (0.018) 0.61 (0.024) FEATURES • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.

Published: Mar 23, 2005 |