* Multi
* base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
* Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
* Triple Gu
BUL64B
Seme LAB
19.35 KB
Npn transistor.
LAB MECHANICAL DATA Dimensions in mm (inches) 6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215) SEME BUL64B 2.18 (0.086) 2.44 (0.096) 0.84 (0.03.
📁 Related Datasheet
BUL642D2 High Gain Bipolar NPN Transistor (ON Semiconductor)
BUL64A NPN Transistor (Seme LAB)
BUL62A NPN Transistor (Seme LAB)
BUL62B NPN Transistor (Seme LAB)
BUL63B NPN Transistor (Seme LAB)
BUL654 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (STMicroelectronics)
BUL65A HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR (Seme LAB)
BUL65B NPN Transistor (Seme LAB)
BUL66A NPN Transistor (Seme LAB)
BUL66B NPN Transistor (Seme LAB)
