* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND APPLICATIONS
* LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE
* HIGH GAIN
* 13 dB MINIMUM APPLICATIONS
* VHF/UHF COMMUNICATIONS from DC to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°
D2002UK
Seme LAB
90.43 KB
Metal gate rf silicon fet.
TetraFET D2002UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA C 2 1 A 3 F (2 pls) H J N (typ) B D (2 pls) MI PIN 1 PIN 3 SOURCE GAT.
📁 Related Datasheet
D2002 Stereo Headphone Amplifier (Shaoxing Silicore Technology)
D200 SIP DC/DC Converters (uPD)
D2001UK METAL GATE RF SILICON FET (Seme LAB)
D2003UK METAL GATE RF SILICON FET (Seme LAB)
D2004UK METAL GATE RF SILICON FET (Seme LAB)
D2005 NPN Transistor (ROHM)
D2005UK METAL GATE RF SILICON FET (Seme LAB)
D2006UK METAL GATE RF SILICON FET (Seme LAB)
D2007UK METAL GATE RF SILICON FET (Seme LAB)
D2008UK METAL GATE RF SILICON FET (Seme LAB)
