metal gate rf silicon fet.
* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND APPLICATIONS
* VERY LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE
* HIGH GAIN
&nbs.
* VERY LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE
* HIGH GAIN
– 11 dB MINIMUM
SOT 171
.
Image gallery
TAGS
Download (Size : 73.13KB)