IRFNJ9130SMD05 Datasheet | Seme LAB

FEATURES 3.05 (0.120) 10.16 (0.400) 5.72 (.225) -100V -11A 0.30Ω 0.76 (0.030) min. 0.127 (0.005) 16 PLCS 0.50(0.020) 7.26 (0.286) 0.127 (0.005) 0.50 (0.020) max. - HERMETICALLY SEALED - SIMPLE DRIVE REQUIREMENTS - LIGHTWEIGHT - SCREENING OPTIONS AVAILABLE SMD05 (TO-276AA) IRF9130SMD05 PAD1 = GATE PAD 2 DRAIN PAD3 = SOURCE - ALL LEADS ISOLATED FROM CASE IRFNJ9130 PAD1 = SOURCE PAD 2 = DRAIN PAD3 = GATE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RθJC Gate - Source Voltage Continuous Drain Current @ Tcase = 25°C Continuous Drain Current @ Tcase = 100°C Pulsed Drain Current Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case ±20V -11A -7A -50A 45W 0.36W/°C - 55 to 150°C 2.8°C/W max. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website http://.semelab.co.uk Document Number 5544 Issue 1 .. IRFNJ9130 IRF9130SMD05 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter BVDSS ∆TJ RDS(on) STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage Breakdown Voltage Static Drain - Source On- State Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain (“Miller”) Charge Turn- On Delay Time Rise Time Turn- Off Delay Time Fall Time SOURCE - DRAIN DIODE...