IRFN130SMD
IRFN130SMD is N-CHANNEL POWER MOSFET manufactured by Seme LAB.
FEATURES
- HERMETICALLY SEALED
- SIMPLE DRIVE REQUIREMENTS
Pad 3
- Gate
1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
SMD1
Pad 1
- Source Pad 2
- Drain
1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 )
100V 11A 0.19W
0 .7 6 (0 .0 3 0 ) m in .
- LIGHTWEIGHT
- SCREENING OPTIONS AVAILABLE
- ALL LEADS ISOLATED FROM CASE
- Also available as IRF130SM with Pin1(Source) and Pin3 (Gate) reversed.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS ID ID IDM PD TJ , Tstg Rq JC Gate
- Source Voltage Continuous Drain Current @ Tcase = 25°C Continuous Drain Current @ Tcase = 100°C Pulsed Drain Current Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case ±20V 11A 7A 44A 45W 0.36W/°C
- 55 to 150°C 2.8°C/W max.
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website http://.semelab.co.uk
Prelim. 7/00
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
BVDSS STATIC ELECTRICAL RATINGS Drain
- Source Breakdown Voltage
Test Conditions
VGS = 0 ID = 1m A VGS = 10V VGS = 10V VDS = VGS VDS ³ 15V VGS = 0 VGS = 20V VGS =
- 20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5BVDSS ID = 11A VDS = 0.5BVDSS VDD = 50V ID = 11A RG = 7.5W ID = 11A ID = 7A ID = 11A ID = 250m A IDS = 7A VDS = 0.8BVDSS TJ = 125°C ID = 1m A
Min.
Typ.
Max.
Unit...
