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Seme LAB
Seme LAB

IRFY140 Datasheet Preview

IRFY140 Datasheet

N-CHANNEL POWER MOSFET

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IRFY140 pdf
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IRFY140
MECHANICAL DATA
Dimensions in mm (inches)
10.41
10.67
0.70
0.90
4.70
5.00
3.56
3.81
Dia.
123
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
VDSS
ID(cont)
RDS(on)
100V
18A
0.092
2.54
BSC
2.65
2.75
0.89
1.14
TO–220M – Metal Package
Pad 1 – Gate
Pad 2 – Drain
Pad 3 – Source
FEATURES
• HERMETICALLY SEALED TO–220 METAL
PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage
±20V
ID Continuous Drain Current @ Tcase = 25°C
18A
ID Continuous Drain Current @ Tcase = 100°C
12A
IDM Pulsed Drain Current
72A
PD Power Dissipation @ Tcase = 25°C
50W
Linear Derating Factor
0.48W/°C
TJ , Tstg
RθJC
RθJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
–55 to 150°C
2.1°C/W max.
80°C/W max.
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95



Seme LAB
Seme LAB

IRFY140 Datasheet Preview

IRFY140 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

IRFY140 pdf
www.DataSheet4U.com
IRFY140
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage VGS = 0
ID = 1mA
BVDSS Temperature Coefficient of
Reference to 25°C
TJ Breakdown Voltage
ID = 1mA
Static Drain – Source On–State
RDS(on) Resistance
VGS = 10V
VGS = 10V
ID = 12A
ID = 18A
VGS(th) Gate Threshold Voltage
VDS = VGS
ID = 250µA
gfs Forward Transconductance
VDS 15V
IDS = 12A
IDSS Zero Gate Voltage Drain Current
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
IGSS Forward Gate – Source Leakage
VGS = 20V
IGSS Reverse Gate – Source Leakage
VGS = –20V
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
VGS = 0
Coss Output Capacitance
VDS = 25V
Crss Reverse Transfer Capacitance
f = 1MHz
Qg Total Gate Charge
VGS = 10V
ID = 18A
VDS = 0.5BVDSS
Qgs Gate – Source Charge
ID = 18A
Qgd Gate – Drain (“Miller”) Charge
VDS = 0.5BVDSS
td(on)
tr
td(off)
tf
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
VDD = 50V
ID = 18A
RG = 9.1
SOURCE – DRAIN DIODE CHARACTERISTICS
IS Continuous Source Current
ISM Pulse Source Current
VSD Diode Forward Voltage
IS = 18A
VGS = 0
TJ = 25°C
trr Reverse Recovery Time
IS = 18A
TJ = 25°C
Qrr Reverse Recovery Charge
di / dt 100A/µs VDD 50V
PACKAGE CHARACTERISTICS
LD Internal Drain Inductance
(from 6mm down drain lead pad to centre of die)
LS Internal Source Inductance (from 6mm down source lead to centre of source bond pad)
100
2
9.1
30
2.4
12
Typ.
0.1
1660
550
120
8.7
8.7
Max. Unit
V
V/°C
0.092
0.11
4
25
250
100
-100
V
S((ΩΩ)
µA
nA
pF
59 nC
12
nC
30.7
21
145
ns
64
105
18
A
73
1.5 V
400 ns
2.4 µC
nH
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95


Part Number IRFY140
Description N-CHANNEL POWER MOSFET
Maker Seme LAB
Total Page 2 Pages
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