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SMP550G-EK Datasheet Preview

SMP550G-EK Datasheet

P.I.N. PHOTODIODE

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SMP550G-EKwww.DataSheet4U.com
MECHANICAL DATA
Dimensions in mm.
P.I.N. PHOTODIODE
WINDOW
Ø 5.9 ± 0.1
Ø 9.1 ± 0.2
Ø 8.1 ± 0.1
SENSITIVE
SURFACE
Ø 0.45
LEAD
5.08 ± 0.2
FEATURES
• EXCELLENT LINEARITY
• LOW NOISE
• WIDEST SPECTRAL RESPONSE
• · ENHANCED UV SENSITIVITY
• LOW LEAKAGE CURRENT
• LOW CAPACITANCE
• INTEGRAL OPTICAL FILTER OPTION note 1
• TO39 HERMETIC METAL CAN PACKAGE
• EMI SCREENING MESH AVAILABLE
Note 1 Contact Semelab Plc for filter options
21
TO-39 Package
Pin 1 – Anode
Pin 2 – Cathode & Case
DESCRIPTION
The SMP550G-EK is a Silicon P.I.N. photodiode
incorporated in a hermetic metal can package. The
package window has greater ultra-violet light transmission,
thus extending the useful spectral range of the device. The
electrical terminations are via two leads of diameter 0.018"
on pitch of 0.2". The cathode of the photodiode is
electrically connected to the package.
The larger photodiode active area provides greater
sensitivity than the SMP400 range of devices, with a
corresponding reduction in speed. The photodiode
structure has been optimised for high sensitivity, light
measurement applications across the infra-red to ultra-
violet spectrum. Inclusion of a suitable optical filter into the
package can produce a device that responds only to ultra-
violet light. The metal can and optional screening mesh
ensure a rugged device with a high degree of immunity to
radiated electrical interference.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
Operating temperature range
Storage temperature range
Temperature coefficient of responsively
Temperature coefficient of dark current
Reverse breakdown voltage
-40°C to +70°C
-45°C to +80°C
0.35% per °C
x2 per 8°C rise
60V
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/98




Seme LAB

SMP550G-EK Datasheet Preview

SMP550G-EK Datasheet

P.I.N. PHOTODIODE

No Preview Available !

SMP550G-EKwww.DataSheet4U.com
CHARACTERISTICS (Tamb=25°C unless otherwise stated)
Characteristic
Test Conditions.
Responsively
λ at 900nm
Active Area
Dark Current
E = 0 Dark
E = 0 Dark
1V Reverse
10V Reverse
Breakdown Voltage
E = 0 Dark 10µA Reverse
Capacitance
E = 0 Dark
E = 0 Dark
0V Reverse
20V Reverse
Rise Time
30V Reverse
50
NEP
900nm
Min.
0.45
60
Typ.
0.55
5.19
2
16
80
55
10
Max. Units
A/W
mm2
4
nA
22
V
pF
9 ns
19x10-14 0.45 W/Hz
1
0.8
0.6
0.4
0.2
0
0
Directional characteristics
80°
70°
Angle from sensor
to illumination
60°
50°
40°
30°
20°
10°
0.2 0.4 0.6 0.8
Normalised incident power
1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Directional Characteristics
10 20 30 40 50 60 70 80
Angle from sensor to illumination
90
Spectral Response
100
80
60
40
20
0
0 200 400 600 800
Wavelength (nm)
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
1000
1200
Prelim. 1/98


Part Number SMP550G-EK
Description P.I.N. PHOTODIODE
Maker Seme LAB
Total Page 2 Pages
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