* D E F
* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND APPLICATIONS DW PIN 1 PIN 3 DRAIN GATE PIN 2 PIN 4 SOURCE SOURCE G H
* LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE
* HIGH GAIN
* 13 dB MINIMUM DIM A B C D E F G H mm 26.16 5.
D2025UK
Semelab
18.30 KB
Metal gate rf silicon fet.
TetraFET D2025UK METAL GATE RF SILICON FET MECHANICAL DATA C 1 2 4 A 3 B GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W 28V
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