HCS65R180S - N-Channel Super Junction MOSFET

SemiHow

Datasheet Details

Part number	HCS65R180S
Manufacturer	SemiHow
File Size	285.75 KB
Description	N-Channel Super Junction MOSFET
Datasheet	HCS65R180S-SemiHow.pdf

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 46 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested March 2015 BVDSS = 650 V RDS(on) typ = 0.15 ȍ ID = 20 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VG.

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Published: Apr 8, 2016 |