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HCS80R850S Dec 2019 HCS80R850S 800V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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HCA60R040F Dec 2020 HCA60R040F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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BT136- 600 BT136-600 4 Quadrants Sensitive TRIAC FEATURES  Repetitive Peak Off-State Voltage : 600V  R.M.S On–State Current (IT(RMS) = 4A)  Sensit

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HRP105N15H Jan 2016 HRP105N15H 150V N-Channel Trench MOSFET Features ‰ High Speed Power Switching, Logic Level ‰ Enhanced Body diode dv/dt capabili

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KSX13007A Series KSH13007A KSH13007AF NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 8A General Description • High voltage, high speed po

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KSX13005A Series KSB13005A/KSG13005A/KSU13005A KSD13005A/KSH13005A/KSH13005AF NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 4A General D

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HCS80R250T Super Junction MOSFET August 2016 HCS80R250T 800V N-Channel Super Junction MOSFET Description ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely

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HCA60R070F July 2020 HCA60R070F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excell

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HCA60R099F Dec 2021 HCA60R099F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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TIP125/126/127 TIP125/126/127 Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -

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HTS8A80AS HTS8A80AS 8A TRIAC FEATURES ‰ Repetitive Peak Off-State Voltage : 1000V ‰ R.M.S On–State Current (IT(RMS) = 8A) ‰ Gate Trigger Current : 10

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HCD70R600S_HCU70R600S June 2015 HCD70R600S / HCU70R600S 700V N-Channel Super Junction MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche

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HTS16A60H_HTS16A80H HTS16A60H/HTS16A80H 3 Quadrants Standard TRIAC FEATURES  Repetitive Peak Off-State Voltage : 600V/800V  R.M.S On–State Current

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HTD2A80AS HTD2A80AS 2A TRIAC FEATURES ‰ Repetitive Peak Off-State Voltage : 1000V ‰ R.M.S On–State Current (IT(RMS) = 2A) ‰ Gate Trigger Current : 10

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KSH130 007F KSH13007F ◎ SEMIHOW REV.A1,Oct 2007 www.DataSheet.in KSH130 007F KSH13007F Switch Mode series NPN silicon Power Transistor - High vol

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HTS4A60H_HTS4A80H HTS4A60H/HTS4A80H 3 Quadrants Standard TRIAC FEATURES  Repetitive Peak Off-State Voltage : 600V/800V  R.M.S On–State Current (IT(

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HTS25A60H HTS25A60H 3 Quadrants Standard TRIAC FEATURES  Repetitive Peak Off-State Voltage : 600V  R.M.S On–State Current (IT(RMS) = 25A)  Gate Tr

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HCA60R095T Super Junction MOSFET June 2016 HCA60R095T 600V N-Channel Super Junction MOSFET Features ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low s

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HCP20NT60V Apr 2014 HCP20NT60V 600V N-Channel Super Junction MOSFET BVDSS = 600 V RDS(on) typ = 0.17 ȍ ID = 20 A FEATURES ‰ Originative New Design

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HTP8A60H_HTP8A80H HTP8A60H/HTP8A80H 3 Quadrants Standard TRIAC FEATURES  Repetitive Peak Off-State Voltage : 600V/800V  R.M.S On–State Current (IT(

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