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HCA60R099F Dec 2021 HCA60R099F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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HCS80R250T Super Junction MOSFET August 2016 HCS80R250T 800V N-Channel Super Junction MOSFET Description ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely

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HCA60R070F July 2020 HCA60R070F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excell

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KSX13007A Series KSH13007A KSH13007AF NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 8A General Description • High voltage, high speed po

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HCT70R1K6 Super Junction MOSFET Jan 2018 HCT70R1K6 700V N-Channel Super Junction MOSFET Features  Very Low FOM (RDS(on) X Qg)  Extremely low swit

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HTB1A60_HTB1A80 HTB1A60/HTB1A80 4 Quadrants Sensitive TRIAC FEATURES  Repetitive Peak Off-State Voltage : 600V/800V  R.M.S On–State Current (IT(RMS

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HTS4A60H_HTS4A80H HTS4A60H/HTS4A80H 3 Quadrants Standard TRIAC FEATURES  Repetitive Peak Off-State Voltage : 600V/800V  R.M.S On–State Current (IT(

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KSH13007 www.DataSheet4U.com KSH13007 ◎ SEMIHOW REV.A0,May 2003 KSH13007 www.DataSheet4U.com KSH13007 Switch Mode series NPN silicon Power Trans

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HRLP120N10H Dec 2016 HRLP120N10H 100V N-Channel Trench MOSFET Features  High Speed Power Switching, Logic Level  Enhanced Body diode dv/dt capabi

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HCS80R850S Dec 2019 HCS80R850S 800V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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HTS6A60H_HTS6A80H HTS6A60H/HTS6A80H 3 Quadrants Standard TRIAC FEATURES  Repetitive Peak Off-State Voltage : 600V/800V  R.M.S On–State Current (IT(

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HCA60R040F Dec 2020 HCA60R040F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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HDA60U60GW HDA60U60GW Ultra Fast Recovery Diode General Description With excellent performance in reverse recovery time, switching speed and rated cu

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HCS65R160T Super Junction MOSFET Jan 2016 HCS65R160T 650V N-Channel Super Junction MOSFET Features ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low sw

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HCS80R670S Dec 2019 HCS80R670S 800V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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HCD80R670 Dec 2019 HCD80R670 800V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent

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HDAE30U60G HDAE30U60G Ultra Fast Recovery Diode General Description With excellent performance in reverse recovery time, switching speed and rated cu

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HFA9N90 July 2013 BVDSS = 900 V HFA9N90 900V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gat

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HFS8N60S Dec 2006 HFS8N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ  ȍ ID = 7.5 A FEATURES ‰ Originative New Design ‰ Superior Avalan

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HCS65R320S June 2019 HCS65R320S 650V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excell

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