SemiHow HFU2N60S
600V N-Channel MOSFET
| Part No. | HFU2N60S |
|---|---|
| Datasheet | HFU2N60S Download |
| Manufacturer |  SemiHow |
| Description | 600V N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7\S #9GS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD2N60S 1 2 3 HFU2N60S 1.Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RATINGS
TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ഒ) – Continuous (TC = 100ഒ͚͑ – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 600 1.9 1.14 7.6 ρ30 120 1.9 4.4 4.5 PD TJ, TSTG TL Power Dissipation (TA = 25ఁ) * Power Dissipation (TC = 25ഒ͚͑ ͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑- Derate above 25ഒ Operating and Storage Temperature Range Maximum lead temperature...
