Full PDF Text Transcription for HFU2N60S (Reference)
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HFU2N60S. For precise diagrams, and layout, please refer to the original PDF.
HFD2N60S_HFU2N60S March 2014 HFD2N60S / HFU2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 1.9 A FEATURES Originative New Design Superior Avalanche...
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ȍ ID = 1.9 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD2N60S 1 2 3 HFU2N60S 1.Gate 2. Drain 3.
HFU2N60S Datasheet
