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HFU2N65 - N-Channel MOSFET

Key Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 9.0 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 4.5 Ω (Typ. ) @VGS=10V  100% Avalanche Tested I-PAK 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain.

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Datasheet Details

Part number HFU2N65
Manufacturer SemiHow
File Size 340.02 KB
Description N-Channel MOSFET
Datasheet download datasheet HFU2N65 Datasheet

Full PDF Text Transcription for HFU2N65 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HFU2N65. For precise diagrams, and layout, please refer to the original PDF.

HFU2N65 Nov 2008 HFU2N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 4.5 Ω ID = 1.6 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Rob...

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 Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 9.0 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 4.5 Ω (Typ.) @VGS=10V  100% Avalanche Tested I-PAK 1.Gate 2. Drain 3.

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