HFU2N65 Datasheet | SemiHow

Nov 2008 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 4.5 Ω ID = 1.6 A Features  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 9.0 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 4.5 Ω (Typ.) @VGS=10V  100% Avalanche Tested I-PAK 1.Gate 2. Drain 3....