Datasheet Summary
HFD2N65S_HFU2N65S
Mar 2010
HFD2N65S / HFU2N65S
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ = 5.0 ȍ ID = 1.6 A
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 5.0 ȍ (Typ.) @VGS=10V 100% Avalanche Tested
D-PAK I-PAK
1 3
HFD2N65S
2 3
1.Gate 2. Drain 3....