Full PDF Text Transcription for HFU2N65S (Reference)
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HFU2N65S. For precise diagrams, and layout, please refer to the original PDF.
HFD2N65S_HFU2N65S Mar 2010 HFD2N65S / HFU2N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 5.0 ȍ ID = 1.6 A FEATURES Originative New Design Superior Avalanche R...
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ȍ ID = 1.6 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 5.0 ȍ (Typ.) @VGS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD2N65S 1 2 3 HFU2N65S 1.Gate 2. Drain 3.
HFU2N65S Datasheet
