HFU2N65F - 600V N-Channel MOSFET

Product Overview

SemiHow

Part number	HFU2N65F
Manufacturer	SemiHow
File Size	210.57 KB
Description	600V N-Channel MOSFET
Datasheet	HFU2N65F Datasheet
Additional preview pages of the HFU2N65F datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD2N65F 1 2 3 HFU2N65F 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-.

HFU70N03V - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)

Other Datasheets by SemiHow

Published: Jun 27, 2016 |