Datasheet Summary
HFD2N65F_HFU2N65F
July 2015
HFD2N65F / HFU2N65F
600V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ ȍ ID = 2 A
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested
D-PAK I-PAK
1 3
HFD2N65F
2 3
1.Gate 2. Drain 3....