HFU2N65U - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 5 ȍ7S#9GS=10V 100% Avalanche Tested May 2014 BVDSS = 650 V RDS(on) typ = 5 ȍ ID = 1.8 A D-PAK I-PAK 2 1 3 HFD2N65U 1 2 3 HFU2N65U 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Param.

HFU2N65U n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFU2N65U
Manufacturer	SemiHow
File Size	403.78 KB
Description	N-Channel MOSFET
Datasheet	HFU2N65U Datasheet

Full PDF Text Transcription for HFU2N65U (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HFU2N65U. For precise diagrams, and layout, please refer to the original PDF.

HFD2N65U_HFU2N65U HFD2N65U / HFU2N65U 650V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very...

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rior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 5 ȍ 7S #9GS=10V 100% Avalanche Tested May 2014 BVDSS = 650 V RDS(on) typ = 5 ȍ ID = 1.8 A D-PAK I-PAK 2 1 3 HFD2N65U 1 2 3 HFU2N65U 1.Gate 2. Drain 3.

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