HFU2N65U Datasheet PDF

FEATURES

‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 5.5 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 5 ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested May 2014 BVDSS = 650 V RDS(on) typ = 5 ȍ ID = 1.8 A D-PAK I-PAK 2 1 3 HFD2N65U 1 2 3 HFU2N65U 1.Gate 2. Drain 3. Source

ABSOLUTE MAXIMUM RATINGS

TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 650 1.8 1.1 7.2 ρ30 116 1.8 4.2 4.5 PD TJ, TSTG TL