Datasheet Summary
HFD2N65U_HFU2N65U
HFD2N65U / HFU2N65U
650V N-Channel MOSFET
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 5 ȍ7S#9GS=10V 100% Avalanche Tested
May 2014
BVDSS = 650 V RDS(on) typ = 5 ȍ ID = 1.8 A
D-PAK I-PAK
1 3
HFD2N65U
1 2 3
1.Gate 2. Drain 3....