SemiHow HFU2N60U
N-Channel MOSFET
| Part No. | HFU2N60U |
|---|---|
| Datasheet | HFU2N60U Download |
| Manufacturer |  SemiHow |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4 ȍ 7\S #9GS=10V 100% Avalanche Tested May 2014 BVDSS = 600 V RDS(on) typ = 4 ȍ ID = 1.8 A D-PAK I-PAK 2 1 3 HFD2N60U 1 2 3 HFU2N60U 1.Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RATINGS
TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25) – Continuous (TC = 100) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 600 1.8 1.1 7.2 ρ30 116 1.8 4.2 4.5 PD TJ, TSTG TL
