HFU2N60U - N-Channel MOSFET

Product Overview

SemiHow

Part number	HFU2N60U
Manufacturer	SemiHow
File Size	403.77 KB
Description	N-Channel MOSFET
Datasheet	HFU2N60U Datasheet
Additional preview pages of the HFU2N60U datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 4 ȍ7S#9GS=10V 100% Avalanche Tested May 2014 BVDSS = 600 V RDS(on) typ = 4 ȍ ID = 1.8 A D-PAK I-PAK 2 1 3 HFD2N60U 1 2 3 HFU2N60U 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Param.

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Published: Apr 14, 2017 |