HCT70R1K6 Datasheet | SemiHow

Features  Very Low FOM (RDS(on) X Qg)  Extremely low switching loss  Excellent stability and uniformity  100% Avalanche Tested  Built-in ESD Diode Application  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC)  TV Power & LED Lighting Power Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 750 5 1.6 5.5 Unit V A Ω n C Package & Internal Circuit SOT-223-2L Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol Parameter Value VDSS VGS IDM EAS dv/dt dv/dt PD VESD(G-S) TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) MOSFET dv/dt ruggedness, VDS=0…560V Reverse diode dv/dt, VDS=0…560V, IDS≤ID Power Dissipation (TC = 25℃) Gate source ESD(HBM-C=100p F, R=1.5KΩ) Operating and Storage Temperature Range 700 ±20 5.0 - 3.2 - 8.4 - 43 50 15 5 2500 -55 to +150 - Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol RθJS RθJA Parameter Junction-to-Solder point Junction-to-Ambient...