SemiHow HCT70R1K6
700V N-Channel Super Junction MOSFET
| Part No. | HCT70R1K6 |
|---|---|
| Datasheet | HCT70R1K6 Download |
| Manufacturer |  SemiHow |
| Description | 700V N-Channel Super Junction MOSFET |
| Buy | Stock & Price |
FEATURES
● Very Low FOM (RDS(on) X Qg)● Extremely low switching loss
● Excellent stability and uniformity
● 100% Avalanche Tested
● Built-in ESD Diode Application
● Switch Mode Power Supply (SMPS)
● Uninterruptible Power Supply (UPS)
● Power Factor Correction (PFC)
● TV Power & LED Lighting Power
KEY PARAMETERS
Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 750 5 1.6 5.5 Unit V A Ω nC Package & Internal Circuit SOT-223-2L D S GABSOLUTE MAXIMUM RATINGS
TJ=25℃ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS dv/dt dv/dt PD VESD(G-S) TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) MOSFET dv/dt ruggedness, VDS=0…560V Reverse diode dv/dt, VDS=0…560V, IDS≤ID Power Dissipation (TC = 25℃) Gate source ESD(HBM-C=100pF, R=1.5KΩ) Operating and Storage Temperature Range 700 ±20 5.0 * 3.2 * 8.4 * 43 50 15 5 2500 -55 to +1...
