HCT70R1K1 - 700V N-Channel Super Junction MOSFET

SemiHow

Key Features

Very Low FOM (RDS(on) X Qg).
Extremely low switching loss.
Excellent stability and uniformity.
100% Avalanche Tested.
Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 750 4.5 1.1 9.3 Unit V A Ω nC.

HCT70R1K1 700v n-channel super junction mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HCT70R1K1
Manufacturer	SemiHow
File Size	262.33 KB
Description	700V N-Channel Super Junction MOSFET
Datasheet	HCT70R1K1 Datasheet

Full PDF Text Transcription for HCT70R1K1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HCT70R1K1. For precise diagrams, and layout, please refer to the original PDF.

HCT70R1K1 Super Junction MOSFET August 2020 HCT70R1K1 700V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle...

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• Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent stability and uniformity • 100% Avalanche Tested • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 750 4.5 1.1 9.

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