Datasheet4U Logo Datasheet4U.com

HCT70R1K1 - 700V N-Channel Super Junction MOSFET

Features

  • Very Low FOM (RDS(on) X Qg).
  • Extremely low switching loss.
  • Excellent stability and uniformity.
  • 100% Avalanche Tested.
  • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 750 4.5 1.1 9.3 Unit V A Ω nC.

📥 Download Datasheet

Datasheet preview – HCT70R1K1

Datasheet Details

Part number HCT70R1K1
Manufacturer SemiHow
File Size 262.33 KB
Description 700V N-Channel Super Junction MOSFET
Datasheet download datasheet HCT70R1K1 Datasheet
Additional preview pages of the HCT70R1K1 datasheet.

📁 Similar Datasheet

  • HCT700 - COMPLEMENTARY SWITCHING TRANSISTORS (Seme LAB)
  • HCT7000 - N-Channel Enhancement Mode MOS Transistor (ETC)
  • HCT70000MTX - N-Channel Enhancement Mode MOS Transistor (TT)
  • HCT7000M - N-Channel Enhancement Mode MOS Transistor (OPTEK)
  • HCT7000M - N-Channel Enhancement Mode MOS Transistor (TT)
  • HCT7000MTX - N-Channel Enhancement Mode MOS Transistor (OPTEK)
  • HCT7000MTXV - N-Channel Enhancement Mode MOS Transistor (OPTEK)
  • HCT7000MTXV - N-Channel Enhancement Mode MOS Transistor (TT)
  • HCT-1-152-15L - Self Leaded Power Inductors (Coilcraft)
  • HCT-2-152-15L - Self Leaded Power Inductors (Coilcraft)
Other Datasheets by SemiHow
  • HCT70R1K6 - 700V N-Channel Super Junction MOSFET
  • HCT90R1K4 - 900V N-Channel Super Junction MOSFET

Full PDF Text Transcription

Click to expand full text
HCT70R1K1 Super Junction MOSFET August 2020 HCT70R1K1 700V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent stability and uniformity • 100% Avalanche Tested • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 750 4.5 1.1 9.
Published: |