SemiHow HCD7N70S
700V N-Channel Super Junction MOSFET
| Part No. | HCD7N70S |
|---|---|
| Datasheet | HCD7N70S Download |
| Manufacturer |  SemiHow |
| Description | 700V N-Channel Super Junction MOSFET |
| Buy | Stock & Price |
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.95 ȍ 7\S #9GS=10V 100% Avalanche Tested June 2015 BVDSS = 700 V RDS(on) typ ȍ ID = 5.0 A D-PAK 2 1 3 1.Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RATINGS
TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25) – Continuous (TC = 100) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 700 5.0 3.2 13.0 ρ20 40 1.2 0.1 50 PD TJ, TSTG TL Power Dissipation (TC = 25) Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 28...
