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HCD7N70S - 700V N-Channel Super Junction MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 9 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.95 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested June 2015 BVDSS = 700 V RDS(on) typ ȍ ID = 5.0 A D-PAK 2 1 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM V.

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Datasheet Details

Part number HCD7N70S
Manufacturer SemiHow
File Size 225.07 KB
Description 700V N-Channel Super Junction MOSFET
Datasheet download datasheet HCD7N70S Datasheet
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Full PDF Text Transcription

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HCD7N70S HCD7N70S 700V N-Channel Super Junction MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 9 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.95 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested June 2015 BVDSS = 700 V RDS(on) typ ȍ ID = 5.0 A D-PAK 2 1 3 1.Gate 2. Drain 3.
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