HCD70R1K4P Datasheet PDF - SemiHow 700V N-Channel Super Junction MOSFET Specs

HCD70R1K4P - 700V N-Channel Super Junction MOSFET

Datasheet Summary

Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 1.15 ȍ(Typ. ) @VGS=10V 100% Avalanche Tested Mar 2016 BVDSS = 700 V RDS(on)Typ ȍ ID = 4.0 A D-PAK 2 1 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM.

Datasheet Details

Part number	HCD70R1K4P
Manufacturer	SemiHow
File Size	196.14 KB
Description	700V N-Channel Super Junction MOSFET
Datasheet	HCD70R1K4P Datasheet
Additional preview pages of the HCD70R1K4P datasheet.

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HCD70R1K4P HCD70R1K4P 700V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.15 ȍ(Typ.) @VGS=10V 100% Avalanche Tested Mar 2016 BVDSS = 700 V RDS(on)Typ ȍ ID = 4.0 A D-PAK 2 1 3 1.Gate 2. Drain 3.

Published: Dec 22, 2016 |