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HCD70R1K4P - 700V N-Channel Super Junction MOSFET

Key Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 7.5 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 1.15 ȍ(Typ. ) @VGS=10V ‰ 100% Avalanche Tested Mar 2016 BVDSS = 700 V RDS(on)Typ ȍ ID = 4.0 A D-PAK 2 1 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM.

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Datasheet Details

Part number HCD70R1K4P
Manufacturer SemiHow
File Size 196.14 KB
Description 700V N-Channel Super Junction MOSFET
Datasheet download datasheet HCD70R1K4P Datasheet

Full PDF Text Transcription for HCD70R1K4P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HCD70R1K4P. For precise diagrams, and layout, please refer to the original PDF.

HCD70R1K4P HCD70R1K4P 700V N-Channel Super Junction MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very ...

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ior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 7.5 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 1.15 ȍ(Typ.) @VGS=10V ‰ 100% Avalanche Tested Mar 2016 BVDSS = 700 V RDS(on)Typ ȍ ID = 4.0 A D-PAK 2 1 3 1.Gate 2. Drain 3.

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