HCD70R950T - 700V N-Channel Super Junction MOSFET

Features

Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 750 4.5 0.95 10 Unit V A ȍ nC.

SemiHow

Datasheet Details

Part number	HCD70R950T
Manufacturer	SemiHow
File Size	397.64 KB
Description	700V N-Channel Super Junction MOSFET
Datasheet	HCD70R950T Datasheet
Additional preview pages of the HCD70R950T datasheet.

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Full PDF Text Transcription

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HCD70R950T_HCU70R950T Super Junction MOSFET Dec 2015 HCD70R950T / HCU70R950T 700V N-Channel Super Junction MOSFET Features Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 750 4.5 0.

Published: Dec 22, 2016 |