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HCD70R950T - 700V N-Channel Super Junction MOSFET

Key Features

  • ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low switching loss ‰ Excellent stability and uniformity ‰ 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 750 4.5 0.95 10 Unit V A ȍ nC.

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Datasheet Details

Part number HCD70R950T
Manufacturer SemiHow
File Size 397.64 KB
Description 700V N-Channel Super Junction MOSFET
Datasheet download datasheet HCD70R950T Datasheet

Full PDF Text Transcription for HCD70R950T (Reference)

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HCD70R950T_HCU70R950T Super Junction MOSFET Dec 2015 HCD70R950T / HCU70R950T 700V N-Channel Super Junction MOSFET Features ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low s...

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nction MOSFET Features ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low switching loss ‰ Excellent stability and uniformity ‰ 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 750 4.5 0.

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