Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested
Key Parameters
Parameter BVDSS @Tj,max
ID RDS(on), max
Qg, Typ
Value 750 6 0.7 14
Unit V A ȍ nC.
Full PDF Text Transcription for HCD70R700T (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HCD70R700T. For precise diagrams, and layout, please refer to the original PDF.
HCD70R700T_HCU70R700T Super Junction MOSFET Dec 2015 HCD70R700T / HCU70R700T 700V N-Channel Super Junction MOSFET Features Very Low FOM (RDS(on) X Qg) Extremely low s...
View more extracted text
nction MOSFET Features Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 750 6 0.