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HCD70R600S - 700V N-Channel Super Junction MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 16 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested BVDSS = 700 V RDS(on) typ = 0.54 ȍ ID = 7.3 A D-PAK I-PAK 2 1 1 32 3 HCD70R600S HCU70R600S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter.

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Datasheet Details

Part number HCD70R600S
Manufacturer SemiHow
File Size 263.50 KB
Description 700V N-Channel Super Junction MOSFET
Datasheet download datasheet HCD70R600S Datasheet
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Full PDF Text Transcription

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HCD70R600S_HCU70R600S June 2015 HCD70R600S / HCU70R600S 700V N-Channel Super Junction MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 16 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested BVDSS = 700 V RDS(on) typ = 0.54 ȍ ID = 7.3 A D-PAK I-PAK 2 1 1 32 3 HCD70R600S HCU70R600S 1.Gate 2. Drain 3.
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