SemiHow HCD70R350E
700V N-Channel Super Junction MOSFET
| Part No. | HCD70R350E |
|---|---|
| Datasheet | HCD70R350E Download |
| Manufacturer |  SemiHow |
| Description | 700V N-Channel Super Junction MOSFET |
| Buy | Stock & Price |
FEATURES
Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application Lighting Hard Switching PWM Server Power Supply ChargerKEY PARAMETERS
Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 750 12 0.35 16 Unit V A ȍ nC Package & Internal Circuit TO-252 D S GABSOLUTE MAXIMUM RATINGS
TC=25 unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS dv/dt dv/dt PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25) – Continuous (TC = 100) – Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) MOSFET dv/dt ruggedness, VDS=0…480V Reverse diode dv/dt, VDS=0…480V, IDSID Power Dissipation (TC = 25) Operating and Storage Temperature Range Maximum lead temperatu
