HCD70R350E - 700V N-Channel Super Junction MOSFET

Features

Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness.

SemiHow

Datasheet Details

Part number	HCD70R350E
Manufacturer	SemiHow
File Size	243.38 KB
Description	700V N-Channel Super Junction MOSFET
Datasheet	HCD70R350E Datasheet
Additional preview pages of the HCD70R350E datasheet.

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Full PDF Text Transcription

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HCD70R350E Super Junction MOSFET Sep 2016 HCD70R350E 700V N-Channel Super Junction MOSFET Features Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application Lighting Hard Switching PWM Server Power Supply Charger Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 750 12 0.

Published: Dec 22, 2016 |