Full PDF Text Transcription for HCD70R350E (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HCD70R350E. For precise diagrams, and layout, please refer to the original PDF.
HCD70R350E Super Junction MOSFET Sep 2016 HCD70R350E 700V N-Channel Super Junction MOSFET Features Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellen...
View more extracted text
Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application Lighting Hard Switching PWM Server Power Supply Charger Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 750 12 0.