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HCS80R250T - 800V N-Channel Super Junction MOSFET

General Description

‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low switching loss ‰ Excellent stability and uniformity ‰ 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 18 0.25 58 Unit V A ȍ nC

Key Features

  • ‰ Switch Mode Power Supply (SMPS) ‰ Uninterruptible Power Supply (UPS) ‰ Power Factor Correction (PFC) ‰ Motor Control & LED Lighting Power ‰ DC-DC Converters Package & Internal Circuit TO-220F G D S Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS IAR EAR dv/dt dv/dt PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Drain Current.
  • Continuous (TC = 25୅).
  • Continuous (TC = 100୅).

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Datasheet Details

Part number HCS80R250T
Manufacturer SemiHow
File Size 267.25 KB
Description 800V N-Channel Super Junction MOSFET
Datasheet download datasheet HCS80R250T Datasheet

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HCS80R250T Super Junction MOSFET August 2016 HCS80R250T 800V N-Channel Super Junction MOSFET Description ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low switching loss ‰ Excellent stability and uniformity ‰ 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 18 0.