HCS80R650E - 800V N-Channel Super Junction MOSFET

SemiHow

Key Features

Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 8 0.65 12 Unit V A ȍ nC.

HCS80R650E 800v n-channel super junction mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HCS80R650E
Manufacturer	SemiHow
File Size	224.77 KB
Description	800V N-Channel Super Junction MOSFET
Datasheet	HCS80R650E Datasheet

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HCS80R650E Super Junction MOSFET August 2016 HCS80R650E 800V N-Channel Super Junction MOSFET Features Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 8 0.