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HCS80R650E - 800V N-Channel Super Junction MOSFET

Features

  • ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low switching loss ‰ Excellent stability and uniformity ‰ 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 8 0.65 12 Unit V A ȍ nC.

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Datasheet Details

Part number HCS80R650E
Manufacturer SemiHow
File Size 224.77 KB
Description 800V N-Channel Super Junction MOSFET
Datasheet download datasheet HCS80R650E Datasheet
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Full PDF Text Transcription

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HCS80R650E Super Junction MOSFET August 2016 HCS80R650E 800V N-Channel Super Junction MOSFET Features ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low switching loss ‰ Excellent stability and uniformity ‰ 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 8 0.
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