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HCA60R099F - 600V N-Channel Super Junction MOSFET

Key Features

  • Very Low FOM (RDS(on) X Qg).
  • Extremely low switching loss.
  • Excellent stability and uniformity.
  • 100% Avalanche Tested.
  • Built-in ESD Diode.
  • Fast Recovery Time.

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Datasheet Details

Part number HCA60R099F
Manufacturer SemiHow
File Size 295.56 KB
Description 600V N-Channel Super Junction MOSFET
Datasheet download datasheet HCA60R099F Datasheet

Full PDF Text Transcription (Reference)

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HCA60R099F Dec 2021 HCA60R099F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent stability and uniformity • 100% Avalanche Tested • Built-in ESD Diode • Fast Recovery Time Application • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply (UPS) • Power Factor Correction (PFC) • AC to DC Converters • Telecom, Solar Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 30.