The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
HCA60R095T Super Junction MOSFET
June 2016
HCA60R095T
600V N-Channel Super Junction MOSFET
Features
Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested
Key Parameters
Parameter BVDSS @Tj,max
ID RDS(on), max
Qg, Typ
Value 650 40 95 109
Unit V A Pȍ nC
Application
Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)
Package & Internal Circuit
TO-247
GD S
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS VGS
ID
IDM EAS IAR EAR dv/dt dv/dt PD TJ, TSTG
TL
Drain-Source Voltage
Gate-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Single Pulsed Aval