Full PDF Text Transcription for HCS65R660S (Reference)
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HCS65R660S. For precise diagrams, and layout, please refer to the original PDF.
HCS65R660S HCS65R660S 650V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very ...
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ior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested November 2014 BVDSS = 650 V RDS(on) typ ȍ ID = 6.2 A TO-220F 12 3 1.Gate 2. Drain 3.
HCS65R660S Datasheet
