Full PDF Text Transcription for HCS7N70S (Reference)
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HCS7N70S. For precise diagrams, and layout, please refer to the original PDF.
HCS7N70S HCS7N70S 700V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low ...
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Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested November 2014 BVDSS = 700 V RDS(on) typ = 0.95 ȍ ID = 5 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25) – Continuous (TC = 100) – Pulsed (Note 1) Gate-Source Voltage Static AC (f>1 Hz)
HCS7N70S Datasheet
