HFB1N65S Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFB1N65S Dec 2012 HFB1N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 0.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-92 1 2 3 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain C.