HFB1N70 Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFB1N70 Jan 2007 HFB1N70 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ = 10.3 Ω ID = 0.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 10.3 Ω (Typ. ) @VGS=10V 100% Avalanche Tested TO-92 1 23 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Cu.