HFS10N65U - N-Channel MOSFET

Product Overview

SemiHow

Part number	HFS10N65U
Manufacturer	SemiHow
File Size	302.52 KB
Description	N-Channel MOSFET
Datasheet	HFS10N65U Datasheet
Additional preview pages of the HFS10N65U datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.8 ȍ7S#9GS=10V 100% Avalanche Tested Oct 2013 BVDSS = 650 V RDS(on) typ = 0.8 ȍ ID = 9.5 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EA.

📁 Similar Datasheet

Other Datasheets by SemiHow

Published: Mar 26, 2016 |