HFS11N40 Datasheet | SemiHow

.. Dec 2005 BVDSS = 400 V 400V N-Channel MOSFET Features  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.38 Ω (Typ.) @VGS=10V  100% Avalanche Tested RDS(on) typ = 0.38 Ω ID = 11.4 A TO-220F 1.Gate 2. Drain 3....