SemiHow HFS11N40
400V N-Channel MOSFET
| Part No. | HFS11N40 |
|---|---|
| Datasheet | HFS11N40 Download |
| Manufacturer |  SemiHow |
| Description | 400V N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Originative New Design● Superior Avalanche Rugged Technology
● Robust Gate Oxide Technology
● Very Low Intrinsic Capacitances
● Excellent Switching Characteristics
● Unrivalled Gate Charge : 35 nC (Typ.)
● Extended Safe Operating Area
● Lower RDS(ON) : 0.38 Ω (Typ.) @VGS=10V
● 100% Avalanche Tested RDS(on) typ = 0.38 Ω ID = 11.4 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source
ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 400 11.4* 7.2* 45.6* ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ 520 11.4 14.7 4.5 50 0.4 -55 to +150 300 Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Ma...
