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HFS11N40 - 400V N-Channel MOSFET

Key Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 0.38 Ω (Typ. ) @VGS=10V  100% Avalanche Tested RDS(on) typ = 0.38 Ω ID = 11.4 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Dr.

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Datasheet Details

Part number HFS11N40
Manufacturer SemiHow
File Size 0.97 MB
Description 400V N-Channel MOSFET
Datasheet download datasheet HFS11N40 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com HFS11N40 Dec 2005 BVDSS = 400 V HFS11N40 400V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.38 Ω (Typ.) @VGS=10V  100% Avalanche Tested RDS(on) typ = 0.38 Ω ID = 11.4 A TO-220F 1 2 3 1.Gate 2. Drain 3.