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HFP11N80Z_HFS11N80Z
Oct 2016
HFP11N80Z / HFS11N80Z
800V N-Channel MOSFET
Features
Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Built-in ESD Diode
Key Parameters
Parameter BVDSS ID
RDS(on), Typ Qg, Typ
Value 800 11 0.