HFS10N65U - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.8 ȍ7S#9GS=10V 100% Avalanche Tested Oct 2013 BVDSS = 650 V RDS(on) typ = 0.8 ȍ ID = 9.5 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EA.

HFS10N65U n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFS10N65U
Manufacturer	SemiHow
File Size	302.52 KB
Description	N-Channel MOSFET
Datasheet	HFS10N65U Datasheet

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HFS10N65U HFS10N65U 650V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.8 ȍ7S#9GS=10V 100% Avalanche Tested Oct 2013 BVDSS = 650 V RDS(on) typ = 0.8 ȍ ID = 9.5 A TO-220F 12 3 1.Gate 2. Drain 3.