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HFS12N60U Datasheet Preview

HFS12N60U Datasheet

N-Channel MOSFET

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HFS12N60U
600V N-Channel MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 42 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
July 2014
BVDSS = 600 V
RDS(on) typ = 0.53 ȍ
ID = 12 A
TO-220F
12
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
12*
7.4*
48*
ρ30
840
12
5.2
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
52
0.42
-55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
2.4
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Units
/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͥ͑͢͡




SemiHow

HFS12N60U Datasheet Preview

HFS12N60U Datasheet

N-Channel MOSFET

No Preview Available !

Package Marking and Odering Information
Device Marking
HFS12N60U
HFS12N60U
Week Marking
YWWX
YWWXg
Package
TO-220F
TO-220F
Packing
Tube
Tube
Quantity
50
50
RoHS Status
Pb Free
Halogen Free
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
On Characteristics
Min
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 6 A
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS = 0 V, ID = 250
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125
VGS = ρ30 V, VDS = 0 V
2.5
--
600
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 12 A,
RG = 25 Ÿ
(Note 4,5)
VDS = 480V, ID = 12 A,
VGS = 10 V
(Note 4,5)
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 12 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 12 A, VGS = 0 V
diF/dt = 100 A/ȝV (Note 4)
--
--
--
--
--
Typ Max Units
-- 4.5
0.53 0.65
V
Ÿ
-- -- V
-- 1
-- 10
-- ρ100
2100
170
11
2750
220
14.5
55 120
45 100
145 300
25 60
42 55
12 --
12 --
nC
nC
nC
-- 12
-- 48
-- 1.4
430 --
4.0 --
A
V
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=10.7mH, IAS=12A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”12A, di/dt”$ȝV, VDD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͥ͑͢͡


Part Number HFS12N60U
Description N-Channel MOSFET
Maker SemiHow
Total Page 7 Pages
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