900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






SemiHow

HFS13N50S Datasheet Preview

HFS13N50S Datasheet

N-Channel MOSFET

No Preview Available !

March 2014
HFS13N50S
500V N-Channel MOSFET
BVDSS = 500 V
RDS(on) typ ȍ
ID = 13 A
FEATURES
ƒ Originative New Design
ƒ Superior Avalanche Rugged Technology
ƒ Robust Gate Oxide Technology
ƒ Very Low Intrinsic Capacitances
ƒ Excellent Switching Characteristics
ƒ Unrivalled Gate Charge : 38 nC (Typ.)
ƒ Extended Safe Operating Area
ƒ Lower RDS(ON) ȍ 7\S #9GS=10V
ƒ 100% Avalanche Tested
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500
13*
8*
52*
ρ30
560
13
19.5
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
48
0.39
-55 to +150
300
*Drain current limited by maximum junction temperature
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
2.58
62.5
Units
/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝;ΒΣΔΙ͑ͣͥ͑͢͡




SemiHow

HFS13N50S Datasheet Preview

HFS13N50S Datasheet

N-Channel MOSFET

No Preview Available !

Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 6.5 A
2.0
--
Off Characteristics
BVDSS
ǻBVDSS
/ǻTJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250
ID = 250 , Referenced to 25
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
500
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 250 V, ID = 13 A,
RG = 25 Ÿ
(Note 4,5)
VDS = 400V, ID = 13 A,
VGS = 10 V
(Note 4,5)
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 13 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 13 A, VGS = 0 V
diF/dt = 100 A/ȝV (Note 4)
--
--
--
--
--
Typ Max Units
-- 4.0
0.39 0.48
V
Ÿ
-- -- V
0.5 -- V/
-- 1
-- 10
-- 100
-- -100
1550
205
23
2000
265
30
25 60
100 210
130 270
100 210
38 50
6.0 --
16.5 --
nC
nC
nC
-- 13
-- 52
-- 1.4
410 --
4.5 --
A
V
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=6mH, IAS=13A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝;ΒΣΔΙ͑ͣͥ͑͢͡


Part Number HFS13N50S
Description N-Channel MOSFET
Maker SemiHow
Total Page 7 Pages
PDF Download

HFS13N50S Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 HFS13N50S N-Channel MOSFET
SemiHow
2 HFS13N50U N-Channel MOSFET
SemiHow





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy