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HFS18N50U Datasheet Preview

HFS18N50U Datasheet

N-Channel MOSFET

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HFS18N50U
500V N-Channel MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 58 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
Apr 2014
BVDSS = 500 V
RDS(on) typ = 0.22 ȍ
ID = 18 A
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500
18 *
11.4 *
72 *
ρ30
950
18
3.7
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
37
0.29
-55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
3.4
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Units
/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝ͲΡΣ͑ͣͥ͑͢͡




SemiHow

HFS18N50U Datasheet Preview

HFS18N50U Datasheet

N-Channel MOSFET

No Preview Available !

Package Marking and Odering Information
Device Marking
HFS18N50U
HFS18N50U
Week Marking
YWWX
YWWXg
Package
TO-220F(A)
TO-220F(A)
Packing
Tube
Tube
TO-220F(A) : Dual Gauge
Quantity
50
50
RoHS Status
Pb Free
Halogen Free
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 9.0 A
2.5
--
Off Characteristics
BVDSS
ǻBVDSS
/ǻTJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
Dynamic Characteristics
VGS = 0 V, ID = 250
ID = 250 , Referenced to 25
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125
VGS = ρ30 V, VDS = 0 V
500
--
--
--
--
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 250 V, ID = 18 A,
RG = 25 Ÿ
(Note 4,5)
VDS = 400 V, ID = 18 A,
VGS = 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
--
--
--
--
--
--
--
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 18 A, VGS = 0 V
--
trr Reverse Recovery Time
IS = 18 A, VGS = 0 V
--
Qrr Reverse Recovery Charge
diF/dt = 100 A/ȝV (Note 4) --
Typ Max Units
-- 4.5
0.22 0.265
V
Ÿ
-- -- V
0.5 -- V/
-- 1
-- 10
-- ρ100
3300
290
16
4300
380
21
80 170
80 170
190 390
60 130
58 76
16 --
17 --
nC
nC
nC
-- 18
-- 72
-- 1.4
375 --
4.2 --
A
V
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=5.3mH, IAS=18A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$di/dt”$ȝV, VDD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝ͲΡΣ͑ͣͥ͑͢͡


Part Number HFS18N50U
Description N-Channel MOSFET
Maker SemiHow
Total Page 7 Pages
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